Rectifier diode Chip

Short Description:

Standard:

Every chip?is?tested at TJM?, random inspection?is?strictly prohibited.

Excellent consistency of the chips?parameters

?

Features:

Low forward voltage drop

Strong thermal fatigue resistance

The thickness of cathode aluminum layer is above 10μm

Double layers protection on mesa


Product Detail

Product Tags

Rectifier?Diode Chip

The rectifier diode chip?manufactured by RUNAU Electronics was originally introduced by GE processing standard and technology which compliant of USA application standard and qualified by worldwide clients. It’s featured in strong thermal fatigue resistance characteristics,?long service life, high voltage, large current, strong environmental adaptability, etc.?Every chip?is?tested at TJM?, random inspection?is?strictly not allowed. The consistency?selection of chips parameters is available?to be provided according to application requirement.

Parameter:

Diameter
mm
Thickness
mm
Voltage
V
Cathode Out Dia.
mm
Tjm
17 1.5±0.1 ≤2600 12.5 150
23.3 1.95±0.1 ≤2600 18.5 150
23.3 2.15±0.1 4200-5500 16.5 150
24 1.5±0.1 ≤2600 18.5 150
25.4 1.4-1.7 ≤3500 19.5 150
29.72 1.95±0.1 ≤2600 25 150
29.72 1.9-2.3 2800-5500 23 150
32 1.9±0.1 ≤2200 27.5 150
32 2±0.1 2400-2600 26.3 150
35 1.8-2.1 ≤3500 29 150
35 2.2±0.1 3600-5000 27.5 150
36 2.1±0.1 ≤2200 31 150
38.1 1.9±0.1 ≤2200 34 150
40 1.9-2.2 ≤3500 33.5 150
40 2.2-2.5 3600-6500 31.5 150
45 2.3±0.1 ≤3000 39.5 150
45 2.5±0.1 3600-4500 37.5 150
50.8 2.4-2.7 ≤4000 43.5 150
50.8 2.8±0.1 4200-5000 41.5 150
55 2.4-2.8 ≤4500 47.7 150
55 2.8-3.1 5200-6500 44.5 150
63.5 2.6-3.0 ≤4500 56.5 150
63.5 3.0-3.3 5200-6500 54.5 150
70 2.9-3.1 ≤3200 63.5 150
70 3.2±0.1 3400-4500 62 150
76 3.4-3.8 ≤4500 68.1 150
89 3.9-4.3 ≤4500 80 150
99 4.4-4.8 ≤4500 89.7 150

Technical specification:

RUNAU Electronics provides power semiconductor?chips of rectifier diode and welding diode.
1. Low on-state voltage drop
2. The gold metallization will be applied to improve the conductive and heat dissipation property.
3. Double layer protection mesa

Tips:

1. In order to remain the?better performance, the chip shall be stored in nitrogen or vacuum condition to prevent the voltage change caused by oxidation and humidity of molybdenum pieces
2. Always?keep the?chip?surface clean, please wear gloves and do not touch the chip with bare hands
3. Operate carefully in the process of use. Do not damage the resin edge surface of the chip and the aluminum layer in the pole area of the gate and cathode
4. In?test or encapsulation, please note that the parallelism, flatness and clamp force?the fixture must be coincide with the specified standards. Poor parallelism will result in uneven pressure and chip damage by force. If excess clamp force imposed, the chip will be damaged?easily. If imposed?clamp force?is too small, the poor contact and heat dissipation will affect?the application.
5. The pressure block in contact with the cathode surface of the chip must be annealed

Recommend Clamp Force

?Chips Size ?Clamp Force Recommendation
?(KN)±10%
?Φ25.4 4?
?Φ30 or Φ30.48 ?10
?Φ35 ?13
?Φ38 or Φ40 ?15
?Φ50.8 ?24
?Φ55 ?26
?Φ60 ?28
?Φ63.5 ?30
?Φ70 ?32
?Φ76 ?35
?Φ85 ?45
?Φ99 ?65

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